Abstract
Nanoscale electrochemical metallization (ECM) memories based on amorphous La1−xSrxMnO3 (a-LSMO) were fabricated using ultrathin porous alumina masks. The ultrathin alumina masks, with thicknesses of about 200 nm and pore diameters of about 80 nm, were fabricated through a typical two-step anodization electrochemical procedure and transferred onto conductive Pt/Ti/SiO2/Si substrates. Resistive switching (RS) properties of the individual Ag/a-LSMO/Pt ECM cell were directly measured using a conductive atomic force microscope. The cells exhibited typical RS characteristics and the OFF/ON resistance ratio is as high as 102. Reproducible RS behaviours on the same ECM cell and the I–V cycles obtained from different ECM cells ensured that the RS properties in nanoscale Ag/a-LSMO/Pt cells are reproducible and reliable. This work provides an effective approach for the preparation of nanostructured large-scale ordered ECM memories or memristors.
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