Nanoscale dry etching of germanium by using inductively coupled CF4 plasma

Abstract

Listen

Translate article

The nanoscale dry etching of germanium was investigated by using inductively coupled CF4 plasma and electron-beam lithography. The optimal dose of PMMA as E-beam lithography resist was ∼200 mC/cm2. When ICP Power was 200W, CF4 gas flow rate was 40 sccm, and process pressure was 20 mTorr, it had a smooth surface and good etch rate. The etching selectivity of Ge wafer to PMMA resist was as low as ∼1.5. Various sub-100 nm dry-etching patterns have been obtained. SEM pictures showed good profile qualities with a smooth etching sidewall and ultrasmall etching features.