Abstract
The next generation of portable computing and communication devices tremendously depend on the technologies that enable the rapid manipulation, caching and high-density non-volatile data storage. The recent development of organic electronics requires high-quality organic memory compatible with other devices, which will eventually lead to the realization of all organic electronic systems. The challenge of the organic electronics application is to find less degradative ways of fabricating ferroelectric polymer nanostructures. In this work, we applied the nanoimprint technique to fabricate ferroelectric poly(vinylidene fluoride-trifluoroethylene) [P(VDF-TrFE)] copolymer line and dot nanostructures and compared the ferroelectric properties and domain formation in these two nanostructures.
Published Version
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