Abstract
A method is described in which the tapered features that are inherent to nanoimprint lithography are inverted to allow successful lift-off. A mold of the relief is created by in-filling the imprinted resist with hydrogen silsesquioxane (HSQ) before selectively removing the resist with O 2 plasma. Nanoscale etch masks have been created by lift-off from the negative HSQ profile and used to create high-aspect-ratio structures in materials that are hard to plasma etch.
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