Abstract
We have investigated the nanofabrication of three-dimensional (3D) chemical vapor deposited (CVD) diamond molds in Electron Cyclotron Resonance (ECR) oxygen ion beam etching technologies using polysiloxane [-R2SiO-]n as an electron beam (EB) mask and a room-temperature (RT)-imprint resist material. The polysiloxane exhibited a negative-exposure characteristic and its sensitivity was 5.5× 10-5 C/cm2. The maximum etching selectivity of polysiloxane film against diamond film was 4.7, which was obtained under the following ECR oxygen ion etching conditions: ion energy of 400 eV, ion incidence angle of 0°, microwave power of 100 W, gas pressure of 1.4× 10-2 Pa and stage temperature of 24°C. The diamond molds of cone and tetragonal pyramid dots were fabricated with polysiloxane mask in EB lithography technology using the RT-nanoimprint lithography (NIL) process. The dots are 500, 600, 700, 800, 900 nm in diameter and width respectively. The pitch between the dots is 2 μm, and each dot has a height of about 1 μm. It was found that the optimum imprinting pressure and its depth obtained after the press for 5 min were 0.5 MPa and 0.5 μm respectively. The resulting diameter of each imprinted polysiloxane pattern was in good agreement with that of the 3D-diamond mold. We carried out the RT-NIL process for the fabrication of diamond nanopatterns, using the 3D-diamond molds that we developed. [DOI: 10.1380/ejssnt.2009.772]
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