Abstract
We report here on the structural and optical properties of selectively grown InAs∕InP quantum dots. Our approach combines electron-beam lithography, reactive ion etching, and selective low-pressure metalorganic vapor phase epitaxy, which allows the growth of nanometer-scale InAs quantum dots directly on InP substrate and an improved control of their size uniformity and density. These nanogrown InAs dots exhibit a high-efficiency photoluminescence band pointed at 1.55μm at room temperature.
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