Abstract
In this study, nitrogen-vacancy center emissions from nanocone structures fabricated on diamond surfaces by gold film annealing and inductively coupled plasma etching techniques were characterized. First, the diamond substate deposited with gold film was annealed to form a nano-sized dot mask. Second, through inductively coupled plasma etching, nanocone-shaped structures were fabricated using optimized gold dots as masks. Finally, the as-fabricated nanocone and planar structures were investigated with photoluminescence experiments at temperatures ranging from room temperature to 80 K, with the results showing approximately two-fold higher emission values for nitrogen-vacancy centers from nanocones.
Highlights
In recent years, optically active impurities in diamond—so-called color centers–have attracted intense research interest
Results and Discussion nano-sized gold dot mask, the gold films of different thicknesses were annealed at different temperatures on the diamond surfaces
In comparison with the plasmon resonance-enhanced emission of Si-V centers [22], our results suggest that the nanocone structure improves the emission efficiency, with no other electronic state changes
Summary
Optically active impurities in diamond—so-called color centers–have attracted intense research interest Their unique properties, which include highly stable fluorescence (photostability) at room temperature and feasible control of highly coherent spinning associated with color centers, give them potential in various applications [1,2]. Color centers in diamonds have to be considered as potential building blocks of future quantum information processing architectures and integrated nanophotonic devices [7,8] Among these color centers, the nitrogen-vacancy (N-V) centers have a more stable coherent time (T2 = 1.8 ms) [9] and are manipulated and controlled with electromagnetic fields [10], making them more attractive. Efforts to improve the emissions of color centers in diamond have involved
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