Abstract
Reactions at the interfaces can occur in metal inserted high-k gate stacks and are likely to evolve during device processing. Such reactions may affect the electrical properties of the stack and hence these could change during processing. The key interfaces are often not atomically flat and characterising the reaction layers on the near atomic scale required is a challenge. Aberration corrected scanning transmission electron microscopy (STEM) and spectrum imaging (SI) using electron energy loss spectroscopy (EELS) is used to characterise an HfN or Hf(O,N) reaction layer, ∼0.25 nm wide, between HfO 2 and TiN. This demonstrates the very significant advances in high spatial resolution characterisation made in recent years.
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