Abstract
In order to effectively improve the reliability capability, a p-channel lateral-diffused MOSFETs with an embedded SCR which is formed by implanting N+ doses in the both sides of the drain end, and this structure called as the npn-arranged-type of pLDMOS-SCR in this chapter (diffusion region of drain-side is N+-P+-N+). Then, changing the layout manner of N+ implants in both sides of a drain-side P+ region is investigated in this chapter by a 0.25-μm 60-V BCD process. In this planning idea, the layout types of N+ region are continuously extended into the drain-side. From the experimental results, due to all of their secondary breakdown current (It2) values are so good that reached above 7 A, it can be found that the layout manner of continuous extended types in the drain-side have a little impact on the ESD capability. However, the major repercussion is the Vh value will be decreased about 10.8–49.5 %.
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