Abstract
The RESURF-region effect formed by the DPW layer and HVNW in an ultra-high voltage (UHV) LDMOS device on the electric field distribution and its ESD capability is investigated in this paper. After testing these DPW-layer partition samples of the UHV nLDMOS by a TLP tester, it can be found that the secondary breakdown current (It2) of the DPW1/4 & DPW_24 cells were increased from 1.73A to 3.36A (increasing 94.2%) as compared with the Reference device. Therefore, the discrete DPW layer can greatly improve the ESD capability in the UHV nLDMOS components.
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