N-AlGaSb and GaSb/AlGaSb double-heterostructure lasers grown by organometallic vapor phase epitaxy

Abstract

n-type doping of AlxGa1−xSb epilayers (0≤x≤1) grown by organometallic vapor phase epitaxy has been achieved by using tritertiarybutylaluminum, triethylgallium, and trimethylantimony as the organometallic precursors and diethyltellurium as the doping source. Electron concentrations exceed 1017 cm−3 for layers with x<0.3, and decrease to ∼1016 cm−3 for x=1 as a result of higher residual acceptor concentration. Lattice-mismatched double-heterostructure diode lasers with AlGaSb cladding layers and GaSb active layer are demonstrated, and indicate the potential of OMVPE for growth of GaSb-based materials for electronic and optoelectronic devices.