Abstract
A large enhancement of the spin polarization of photoelectrons has been observed. These are emitted from a 0.085μm thick strained GaAs (001) layer grown on GaAs1-x Px by the MOCVD method. The phosphorus fraction x was 0.17.The lattice mismatch is 6.1×10-3 and the observed residual strain in the layer was 5.3×10-3. The energy splitting between heavy hole and light hole bands at the valence band maximum was estimated to be ∼34meV. The maximum polarization of ∼86% was observed with a quantum efficiency of ∼2×10-4, under the condition that the cathode was at room temperature and the excitation photon wavelength was ∼860nm.
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