Abstract
This paper represents the dynamic avalanche mechanism of Fast Recovery Diode (FRD) based on failure analysis under the Un-clamped Inductive Switching (UIS) test condition and the improvement of avalanche capability by several 1000 times (from 0.1mJ to several 100mJ) by making experimentally different anode junction depth (from 5um to 10um) of 200V 10A FRD and when this avalanche energy guaranty is adopted to high frequency switching rectifier without voltage protection circuit (ex. R-C snabber) and adequate lower maximum reverse blocking voltage selected, rectifier conduction power loss is reduced by about 20%. This method will contribute to make some sort of power sources for example, communication base power, light projector, welder machine and plating power source so on, better power efficiency and better ecology machine. More over this method will make those power sources smaller and better cost effective.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callMore From: Journal of the Japan Institute of Power Electronics
Disclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
