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Abstract
The fundamental model of energy transformation between the inductor and the power transistor for the unclamped inductive switching (UIS) test is inspected. Based on the experimental results, the energy stored in the inductor at the period of the channel turn-on can be dissipated by the power transistor after the channel is turned off. In this work, a new theoretical model to well describe the electrical and thermal behaviors of the power transistor during the unclamped inductive switching (UIS) test has been identified and analyzed with the experimental silicon results under different inductor values in 0.15 $\mu \text{m}$ BCD process. The total UIS energy reduced due to series resistance of the inductor and the power transistor has been theoretically explained and well matches with the experimental measured results on silicon.
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