基于弱外延生长的有机薄膜晶体管的研究

Abstract

采用弱外延生长(Weak Epitaxy Growth, WEG)的方法制备OTFTs，研究了不同衬底温度对诱导层p-6P生长形貌的影响，以及WEG-OTFTs器件特性与诱导层形貌的关系。另外，还研究了诱导层p-6P的厚度变化对WEG-OTFTs场效应迁移率的影响。研究发现随着p-6P厚度增加WEG-OTFTs的场效应迁移率是一个先上升后下降然后再上升再下降的过程。我们在诱导层p-6P的厚度2 nm，衬底温度180度时得到了最大的OTFTs场效应迁移率1.03 cm2/Vs。 OTFTs were prepared by the method of WEG (Weak Epitaxy Growth). The results showed that substrate temperature strongly affected the growth morphology of p-6P inducement layer, and the relationship between WEG- OTFTs device characteristics and the morphology of p-6P inducement layer. Furthermore, OTFTs device performance depending on the thickness of p-6P inducement layer was disclosed. We found that as the p-6P thickness rose up continuously, the WEG-OTFTs mobility increased at first then decreased, and increased again and then decreased at last. The maximum field effect mobility we obtained was 1.03 cm2/Vs at the conditions of p-6P layer thickness of 2 nm and the substrate temperature of 180˚C.