Abstract
采用弱外延生长(Weak Epitaxy Growth，WEG)的方法制备OTFTs，研究了不同衬底温度对诱导层p-6P生长形貌的影响，以及WEG-OTFTs器件特性与诱导层形貌的关系。另外，还研究了诱导层p-6P的厚度变化对WEG-OTFTs场效应迁移率的影响。研究发现随着p-6P厚度增加WEG-OTFTs的场效应迁移率是一个先上升后下降然后再上升再下降的过程。我们在诱导层p-6P的厚度2 nm，衬底温度180℃时得到了最大的OTFTs场效应迁移率1.03 cm2/Vs。 OTFTs (Organic Thin Film Transistor) were prepared by the method of WEG (Weak Epitaxy Growth). The effection of the growth morphology of p-6P at difference substrate temperature and the relationship between WEG- OTFTs device performance and the morphology of p-6P inducement layer, were investigated. Furthermore, OTFTs device performance depending on the thickness of p-6P inducement layer was disclosed. We found that as the p-6P thickness rose up continuously, the WEG-OTFTs mobility increased at first then decreased, and increased again and then deseased at last. The maximum field effect mobility we obtained was1.03 cm2/Vs at the conditions of p-6P layer thickness of 2 nm and the substrate temperature of 180˚C.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
