Ultrathin-Film Growth of para-Sexiphenyl (I): Submonolayer Thin-Film Growth as a Function of the Substrate Temperature

Abstract

The para-sexiphenyl (p-6P) monolayer film induces weak epitaxy growth (WEG) of disk-like organic semiconductors, and their charge mobilities are increased dramatically to the level of the corresponding single crystals [Wang et al., Adv. Mater. 2007, 19, 2168]. The growth behavior and morphology of p-6P monolayer film play decisive roles on WEG. Here, we investigated the growth behavior of p-6P submonolayer film as a function of the substrate temperature. Its growth exhibited two different mechanisms at high and low substrate temperature. At high substrate temperature (>60 degrees C), the mechanism of diffusion-limited aggregation controlled the growth of submonolayer thin film with fractal islands, whereas at low substrate temperature (< or =60 degrees C), the submonolayer thin film was composed of the compact islands. Its growth exhibited another growth mechanism in which the stable compact islands were formed by dissociation and reorganization of the metastable disordered film. The substrate temperature of about 180 degrees C may be optimal to fabricate high-quality p-6P monolayer film with large-size domains and low saturated island density of about 0.018 microm(-2).