Abstract
1．はじめに 半導体の微細化の道筋はITRSのロードマップ(1)によれば，2011年に22 nm NAND Flashメモリの量産がダブルパターニングで開始された (図1) 。また16 nmでは過去EUVが本命とされていたが，光源出力の問題から量産技術の選択からはずされ (2012年)，現在ではArF液浸リ
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