Update of >300W high power LPP-EUV source challenge IV for semiconductor HVM

Abstract

The extreme ultraviolet (EUV) light source has been developed together with the lithography EUV scanner. As tool with a 10 W EUV light source, ASML shipped the “a-demo tool” in 20071) and Nikon shipped EUV-1 in 20082). Then ASML developed the b-tool, NXE-3100, at the beginning of 2011 with a 100 W EUV light source.3)4) Requirement of the EUV exposure tool is now covered by the g-tool; NXE3300 (for high volume manufacturing (HVM))5). The required EUV power is 250 W clean power (after purifying infrared (IR) and deep ultra violet (DUV) spectra) at intermediate focus (IF). However, the demonstrated power level was around 80 W6)7) in 2013.