Abstract
Gigaphoton Inc. has been developing a CO2-Sn-LPP (LPP: Laser Produced Plasma) extreme ultraviolet (EUV) light source system for high-volume manufacturing (HVM) semiconductor lithography. Key components of the source include a high-power CO<sub>2</sub> laser with 15 ns pulse duration and 100 kHz repetition frequency, a solid-state pre-pulse laser with 10 ps pulse duration, a high-speed Sn-droplet generator, a high-speed and high accuracy shooting system, and a magnetic field debris mitigation system. To achieve an in-band power of 330 W with long collector mirror lifetime and stable output, we improved the performance of key system components; especially, the laser beam quality at 27 kW CO<sub>2</sub> laser output power by upgrading the CO<sub>2</sub> laser beam transfer system, the dose stability and suppression of small Tin (Sn) debris, upgrading a shooting control system, improvement of the collector mirror degradation rate by the optimization of H<sub>2 </sub>flow condition, and changing the EUV chamber structure. We achieved an in-band power of 250W under DC operation and demonstrated a power scalability up to 365W. This paper presents the key technology update of our EUV light source.
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