Abstract
We describe properties of laser produced plasmas (LPP) for extreme ultra violet (EUV) light source for next generation lithography as an industrial application of LPP. We briefly present three topics related to the LPPEUV light source; laser intensity dependence of conversion efficiency from laser light to EUV light with 13.5nm wavelength with 2% bound width with tin target, present understanding of EUV emission from xenon target, and atomic processes in those targets.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
