Abstract
In the third-generation low-level-light image tube,a super thinner ion barrier film(IBF) was covered on the input surface of microchannel plate(MCP) to protect the photocathode and prolong the operation life of the image tube.In order to further investigate the properties of IBF,a Monte-Carlo simulation on the stopping and transmission characteristics of particles in Al2O3 and SiO2 IBFs were conducted.It was found that the dead-voltage was 230～240 V and 220～230 V for Al2O3 and SiO2 IBF with the thickness of 5 nm,respectively.The number of the back-scattered electron was as high as 19% for the incident electrons with energy of 0.24 keV.For the incident energy of 0.8 keV,the electron transmittance was 87.16% and 88.12%,and the limited thickness of the IBF was 15 nm and 16nm for Al2O3 and SiO2 film,respectively.For C+,N+ and O+ ions with energy of 0.26 keV,the ion stopping power was 95%～99% for Al2O3 IBF.The Al2O3 IBF showed satisfied electron transmittance and ion stopping power when the thickness of IBF was 5 nm.
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