Abstract

The fabrication of ion barrier film on microchannel plate (MCP) was introduced. The experimental system for high-temperature vacuum baking on MCP and technological condition were given. The measurement on the electrical properties, the dead-voltage and other parameters of MCP with an ion barrier film were shown. The changes before and after high-temperature vacuum baking were also investigated for the MCP with ion barrier film. By analysis and discussion, it was concluded that high-temperature vacuum baking caused the film's thickness changed, the dead-voltage decreased, and the electron gain decreased with the increase of the film's thickness for the MCP with an ion barrier film.

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