Multistable floating body potentials: The cause of hysteresis in silicon-on-insulator metal-oxide-semiconductor transistors

Abstract

An experimental study of the hysteresis ID-VG characteristics in n-channel silicon-on-insulator metal-oxide-semiconductor transistors is reported. The result shows that the hysteresis is induced by multistable floating body potentials. An analytical model, which is based on the nonlinear feedback of carrier generation via multiplication and carrier discharge through parasitic bipolar action, also reveals that multistable floating body potentials are responsible for the hysteresis in ID-VG characteristics. To alleviate hysteresis effect, it is essential to reduce the parasitic bipolar current gain α and multiplication factor M. The reduction of α and M can be achieved by optimal source/drain design.