Abstract
A multiplexed array of 512 current mirror (CM) type CMOS piezoresistive FET stress sensor cells has been fabricated on an MOSIS tiny chip. Driven by an on-chip counter, the sequentially scanned arrays produce the highest resolution mapping of in-plane normal stress and shear stress in an integrated circuit die reported to date. The stress sensor array is calibrated using a chip-on-beam calibration technique, and the measured stress distributions agree well with finite element simulation results. This close correspondence gives the first indirect proof that the MOS shear stress sensors are truly responding to shear stresses.
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