Multiple Upsets Induced by Protons and Neutrons in Electronic Devices

Abstract

90-nm SRAM memory integrated circuits and CCD- and CMOS-matrices have been irradiated by nucleon beams of the synchrocyclotron at the Konstantinov Petersburg Nuclear Physics Institute, National Research Centre “Kurchatov Institute.” Upset cross section data in memory integrated circuits induced by protons with an energy of 1000 MeV and pixels with large value of dark current (spikes) in optoelectronic devices irradiated by protons with an energy of 1000 MeV and neutrons with an energy spectrum similar to the spectrum of atmospheric neutrons have been presented. Most attention has been paid to the study of spike clusters and multiple upsets occurrence. It has been established that most spikes and single event upsets are located in clusters (multiple upsets).