Abstract
Solid source molecular-beam epitaxy has been employed to grow InAs/GaAs short period strained-layer superlattices (SPSLS) on InP substrates, and multiple quantum well samples incorporating these SPSLS as the well regions. Excitons are observed in the room-temperature transmission data at 1.3 μm wavelength, without the use of phosphorous. We discuss our novel shutter sequence which involves a total growth interrupt (all shutters closed), and the growth conditions necessary to obtain high quality SPSLS on InP substrates. Furthermore, data including room-temperature absorbance spectra, low temperature photoluminescence, and x-ray diffraction on various samples with band edges in the 1.3–1.6 μm wavelength range are presented.
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Schedule a callMore From: Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena
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