Abstract
InGaAs/GaAs multiple quantum well (MQW) structures with wells that consist of InAs/GaAs short-period strained-layer superlattices (SPSLS) have shown sharp excitonic absorption peaks at room temperature, despite the high degree of strain.1 By using superlattices with multiple periods consisting of 2 monolayers of InAs and 5 monolayers of GaAs, dislocationfree InGaAs wells with 0.30 average In mole fractions have been obtained.2 We report the first MQW waveguide modulators based on these InAs/GaAs SPSLS quantum wells. These modulators demonstrate significant electro-absorption and electro-refraction effects at wavelengths between 1.00 and 1.06 µm. An advantage of such modulators is that they can be monolithically integrated with low-threshold-current InGaAs lasers as well as low-loss GaAs waveguides for various optical circuit applications. In addition, stronger electric-field dependences are expected for the wider wells permitted by the use of SPSLS.3
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