Abstract
We report the observation of multiple negative differential resistance (NDR) in a metal (CoSi2)/insulator (CaF2) resonant tunneling hot electron transistor structure. Multiple NDR observed here can be attributed to the modulation of the transmission probability of hot electron waves due to quantum interference in the conduction band of the insulator (CaF2) collector barrier layer between two metal (CoSi2) layers. By reducing the influence of the Schottky diode at the CoSi2/Si interface, relatively clear and low-voltage NDR is observed. It is found, by a simulation including parasitic elements, that the collector resistance and leakage current greatly influence the current voltage characteristics.
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