Abstract
We theoretically discuss GaN-based quantum-effect electron devices using quantum interference of hot electron waves in the conduction band of the large bandgap collector barrier. In this type of device, the quantum interference of electrons plays a main role in the operation principle and originates the interesting device functions. The device consists of AlN/GaN/AlN double-barrier resonant tunneling (RT) emitter and AlN collector barrier. Double barrier RT emitter provides electrons with narrow energy distribution into the conduction band of the collector barrier, and the modulation of the transmission probability of the hot electron waves occurs due to the quantum interference effect. Multiple negative differential resistance (NDR) with relatively high collector current density is expected from the theoretical results, suggesting new possibilities for a variety of novel device applications.
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