Abstract
The multiphonon nature of radiative and nonradiative recombination processes of various types in semiconductors extending from covalent to ionic crystals is described in terms of the electronic radius a and the multiphonon parameter S. Intrinsic and extrinsic self-trapping is considered from a unified view-point, with emphasis on the different roles of short and long range forces. Deep impurity states favorable for multiphonon nonradiative recombination, and some other impurity states with strong lattice distortion, are ascribed to extrinsic self-trapping. A speculation on the microscopic mechanism of defects formation, another conversion channel of recombination energy, is presented for the case of alkali halides.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
