Abstract
Exploring new synaptic electronic devices that combine computing and memory is a promising strategy that fundamentally approaches intelligent machines. In this study, the multilevel resistive switching and synaptic behaviors of a MnO-based device is studied. The device is composed of Al/MnO/Ni sandwich structure, has stable resistance switching characteristics, has continuous nonvolatile memory state, can be used as electrically programmable and erasable analog memory. The gradual conductance modulation is realized by changing the compliance current and the maximum scanning voltage. The Al/MnO/Ni devices successfully mimic the basic functions of synapses, including the paired-pulse facilitation, spike-rate-dependent plasticity, excitatory postsynaptic current, short-term plasticity, long-term plasticity, and sike-timing-dependent plasticity.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have