Abstract
Ag/0.7 wt% Nb-doped SrTiO3 (Nb:STO)/Ti struc- ture was prepared by sputtering Ag and Ti electrodes on a Nb:STO single crystal substrate and the resistance switch- ing (RS) properties were investigated. Reversible multilevel resistance switching behavior was obtained by applying dif- ferent voltages. The resistance switching (RS) effect comes from the Schottky barrier existed between Ag and Nb:STO interface. The multilevel switching mechanism may be re- lated to the different number of electrons trapped or de- trapped by oxygen vacancies (Vo 2+ ) at the Ag/Nb:STO in- terface, which can change the width of depletion layer. The temperature dependence on resistance of Ag/Nb:STO/Ti suggests that both high resistance state (HRS) and low re- sistance state (LRS) are of semiconductor behavior. Sub- strate annealing in vacuum degrades the RS properties of
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