Abstract
In this study, a multilevel logic-compatible two-transistor-two-resistor (2T2R) latch array for computing-in-memory (CIM) is proposed, featuring high power efficiency, fast response, and high resolution. Combining the resistive switching pairs of the Hf-based gate dielectric layers and a near-threshold-operated output transistor for resistance ratio enhancement, non-volatile memory (NVM) latch arrays are implemented on Si. Taking the advantage of the stable and reliable output by complementary resistive states, the ON– OFF current ratio can be greatly improved. In addition, low power consumption by the near-threshold operation, high data density by multilevel cell, and the novel latch arrays successfully enhance the accuracy and lower power of the analog multiply–accumulate-operation (MAC) and become a promising module in the CIM applications.
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