Abstract
Abstract The present study applies dopant-free MoOx/Ag/MoOx (MAM) multilayer films with ultra-low sheet resistance as emitters in MAM/n-Si solar cells, and establishes the film parameters for optimized performance as a hole-selective contact. Device performance was optimized by an MoOx (55±3 nm)/Ag (10±1 nm)/MoOx (6±2 nm)/n-Si solar cell, demonstrating a power conversion efficiency of 13.01%, in conjunction with a short-circuit current density of 29.43 mA/cm2, an open-circuit voltage of 583 mV, and a fill factor of 75.83%. Furthermore, the present study is also the first study to employ MAM as an emitter to replace MoOx and transparent conductive oxide films. The fabrication process employed is simple, dopant-free, and conducted at low temperature, and therefore offers significant potential for the mass production of MAM/n-Si solar cells.
Published Version
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a call