Abstract
AbstractIn this study, niobium‐doped titanium oxide (TNO) was employed for a novel transparent conductive oxide (TCO) film to construct a porous‐TiO2/TNO homojunction in a dye‐sensitized solar cell (DSSC). However, considering a balance between the electrical and optical properties of the TCO film, the sheet resistance in TNO was tuned to be higher than that in a typical fluorine‐doped tin oxide (FTO). The photovoltaic performance of the cell with the TNO film (TNO cell) was optimized to be almost comparable to that with a conventional FTO film (FTO cell) by coating the surface of the porous‐TiO2 layer with a thin alumina or magnesia film to block a back reaction within the cell. An electrochemical impedance measurement was conducted to determine the detailed photovoltaic performance from the viewpoint of electron transportation in the cell. R1, the real part of ω1, indicated that electron transportation at the porous‐TiO2/TNO interface was more favorable than that at the porous‐TiO2/FTO interface, which was supported by AC phase change in the cell at a high‐frequency range. We found that the homojunction newly introduced in the cell is one of the key concepts for developing a DSSC into a high‐performance photovoltaic device.
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