Multilayer Graphene Nanoribbon (MLGNR) as VLSI Interconnect Material at Nano-scaled Technology Nodes

Abstract

Graphene nanoribbions (GNRs) are potentially stable and have attractive properties to act as VLSI interconnect material. The circuit level modeling of multilayer graphene nanoribbon (MLGNR) is carried out in this paper. It is observed that the resistance of MLGNR rises with the increase in interconnects length from 500 to 2000 μm for 32, 22 and 16 nm technology nodes. The performance of MLGNR is estimated and compared for three different technology nodes in terms of delay and power delay product (PDP). To perform the comparison, a similar analysis is also performed for conventional copper interconnect. It is revealed from the results that the performance in terms of delay and PDP of MLGNR is much better than copper for longer interconnect lengths at 32, 22 and 16 nm technology nodes. Therefore, it is proposed that MLGNR has a potential to becomes a suitable alternative to replace copper as an interconnect material for low power and high speed VLSI industry for nano scaled technology nodes.