Performance analysis of multilayer graphene nanoribbon (MLGNR) interconnects

Abstract

This paper addresses the impact of interlayer resistance due to c-axis resistivity and contact resistance on performance in terms of delay, power dissipation and power delay product (PDP) of Multi-layer graphene nanoribbon (MLGNR) interconnect. The impact of model parameter i.e. Fermi energy $$(\hbox {E}_\mathrm{F})$$(EF) on performance of MLGNR is also discussed. A similar analysis is performed for copper interconnect and results are compared with MLGNR at 22 nm technology node. The impact of interlayer resistance on equivalent resistance of MLGNR is critically analyzed. Inductive and capacitive coupling between the adjacent layers are included in this analysis. It is found that the MLGNR with interlayer resistance, compared to copper, gives better performance in terms of delay, power dissipation and PDP with higher value of Fermi energy for semi global to global lengths of interconnect (300---1000 $$\upmu \hbox {m})$$μm) whereas reverse is true for local lengths 100---200 $$(\upmu \hbox {m})$$(μm). In addition, performance gap between MLGNR with and without interlayer resistance decreases with increase in Fermi energy.