Multilane shave-off profiling for build-up circuit

Abstract

Shave-off depth profiling by nano-beam secondary ion mass spectrometer (nano-beam SIMS), our own unique technique, achieves the highly precise depth profiling with nanometer-dimensional depth resolution. This method is a very unique depth profiling for acquiring a depth profile by the shave-off scanning mode (a fast horizontal sweep of an FIB is combined with a very slow vertical sweep). Shave-off depth profiling has its own features: absolute depth scale, pin point depth profiling and application for rough surface and hetero interface. However, conventional shave-off depth profiling provided only depth information by integrating lateral information. Therefore, we newly developed multilane shave-off profiling. In this new method, we can divide some lateral information precisely by synchronizing signal acquisition with FIB control. In this study, we demonstrate the example of new multilane shave-off profiling by analyzing build-up circuit.