Abstract
Shave-off profiling with nano-beam SIMS achieves the highly precise depth profiling with nanometer-scaled depth resolution by utilizing FIB micro-machining process to provide depth profile. This method is very unique depth profiling for acquiring a depth profile by shave-off scanning mode (A fast horizontal sweep of FIB is combined with the very slow vertical sweep). Shave-off profiling has its own features; absolute depth scale, pin point depth profiling and application for rough surface and/or hetero interface. However, the discussion of the sputtering mechanism in shave-off profiling is still insufficient because shave-off scanning mode has distinctive position of the primary ion beam against the sample. In this study, we discussed the difference of sputtering mechanism between shave-off scan and conventional raster scan from the view point of sputtered atom yields of experimental results and calculation results. In addition, the molecular dynamics (MD) simulation under shave-off condition is improved in order to visualize the sputtering mechanism of shave-off profiling. As a result,‘shave-off sputtered atom yield’is rather high compared to conventional sputtered atom yield according to distinctive sputtering mechanism of shave-off scanning mode. [DOI: 10.1380/ejssnt.2011.386]
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