Abstract
A novel method of analyzing the deep impurity levels in semiconductors is proposed. This method analyzes the square of the transient junction capacitance waveforms as multiexponentials by using the nonlinear least squares method and is referred to as C2-MEDLTS. The effect on the emission rate τ of the deep levels in the nonionized region (λ-effect) is included. It allows correct evaluation of the activation energies and capture cross sections even for the high concentrations of closely spaced deep levels (NT/ND ≃ 1).
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