Abstract
The Insulated Gate Bipolar Transistor (IGBT) is the component with the highest failure rate in power converters, and its reliability is a critical issue in power electronics. IGBT module failure is largely caused by solder layer fatigue or bond wires fall-off. This paper proposes a multi-chip IGBT module failure monitoring method based on the module transconductance, which can accurately monitor IGBT module chip failures and bond wire failures. The paper first introduces the failure mechanism and module structure of the multi-chip IGBT module; then, it proposes a reliability model based on the module transconductance and analyzes the relationship between chip failure, bond wire failure, and the transmission characteristic curve of the IGBT module. Finally, the module transconductance under chip failure and bond wire failure is measured and calculated through simulation, and the temperature is calibrated, which can eliminate the influence of temperature on health monitoring. The results show that the method has a high sensitivity to chip failures and bond wire failures, can realize the failure monitoring of multi-chip IGBT modules, and is of great significance for improving the reliability of power converters.
Highlights
The Insulated Gate Bipolar Transistor (IGBT) module is a power electronic integrated module composed of multiple IGBT chips, diode chips, solder layers, bond wires, ceramic copper-clad substrates, heat dissipation base plates, and power terminals
According to the above theoretical analysis and test results, it can be known that the chip failure and bond wire failure in the multi-chip IGBT module will cause the module transmission characteristic curve uGE -iC to change, and the module transconductance value calculated from the transmission characteristic curve can be used as characteristic parameters for health monitoring of the IGBT module
This paper presents a method for monitoring the health of a multi-chip IGBT module based on module transconductance
Summary
The Insulated Gate Bipolar Transistor (IGBT) module is a power electronic integrated module composed of multiple IGBT chips, diode chips, solder layers, bond wires, ceramic copper-clad substrates, heat dissipation base plates, and power terminals. Reference [12] uses on-state resistance RCE(ON) to monitor the aging degree of the IGBT module package online It has high sensitivity, its resistance to junction temperature interference is low, and the first bond wire lift-off in the IGBT module cannot be detected. Reference [13,14,15] uses the peak gate current IGPeak to monitor the shedding of the bond wire in the parallel IGBT module This parameter has a strong resistance to changes in junction temperature, detecting the peak gate current value is difficult in practical applications. The results show that the method has good sensitivity to chip failures and bond wire failures, can realize the failure monitoring of multi-chip IGBT modules, and is of great significance for improving the reliability of power converters.
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