Multi-chip Parallel IGBT Power Module Failure Monitoring Based on Gate Dynamic Characteristics

Abstract

Insulated gate bipolar transistors (IGBTs) are the critical devices in power electronic equipment such as new energy grid-connected inverters, and their reliability largely determines the security and stability of new energy power generation systems and power grids. IGBT module fault monitoring is of great significance for inverter health management and the regular and stable operation of the power system. This paper presents a method for monitoring IGBT module faults by detecting gate voltage and current dynamic characteristics. Firstly, the structure of the multi-chip parallel IGBT module and the gate-emitter equivalent circuit are analyzed, and then a gate reliability model is established. The IGBT module chip failure is identified by monitoring the gate voltage and current dynamic characteristics, and a fault monitoring method based on PPMCC is proposed. This method can effectively monitor the number of IGBT chip failures in a multi-chip parallel IGBT module.