Multi-state tunnel field effect transistor based on face tunneling with gate-source overlap

Abstract

In this paper, a ternary surface tunneling field effect transistor (TF-TFET) based on the tunneling mechanism is designed and fabricated. By adjusting the parameters and bias voltage of the surface tunneling and the line tunneling, the transistor introduces a stable ”intermediate state” between the switching states of conventional binary TFET devices, which realizes the function of a ternary logic device. The device can realize the conversion of ternary logic and binary logic devices under certain conditions, and realize various functions. The fabrication process of the device is compatible with the traditional CMOS process and is also of great significance for realizing the development of the ternary logic operation unit.