Abstract
A reliable bipolar resistive switching device was achieved with multi-level switching behavior in fluorine-doped titanium oxide (TiOxFy) film. Different resistance states can be precisely controlled by different pulse voltages, which reveals the device’s high potential in neuromorphic research. The characteristics of I–V curves in each resistance state were analyzed. Nanoparticles were observed in the TiOxFy film by HR-TEM. The underlying physical mechanisms during resistance switching are discussed and a model of a meshy conducting path is proposed.
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