Multi-level Cells and Quantized Conductance Characteristics of Al2O3-Based RRAM Device for Neuromorphic System

Abstract

Recently, various resistance-based memory devices are being studied to replace charge-based memory devices to satisfy high-performance memory requirements. Resistance random access memory (RRAM) shows superior performances such as fast switching speed, structural scalability, and long retention. This work presented the different filament control by the DC voltages and verified its characteristics as a synaptic device by pulse measurement. Firstly, two current–voltage (I–V) curves are characterized by controlling a range of DC voltages. The retention and endurance for each different I–V curve were measured to prove the reliability of the RRAM device. The detailed voltage manipulation confirmed the characteristics of multi-level cell (MLC) and conductance quantization. Lastly, synaptic functions such as potentiation and depression, paired-pulse depression, excitatory post-synaptic current, and spike-timing-dependent plasticity were verified. Collectively, we concluded that Pt/Al2O3/TaN is appropriate for the neuromorphic device.