Abstract
We investigated the growth of AlAs 0.16Sb 0.84 by using tritertiarybutylaluminum (TTBAl), tertiarybutylarsine (TBAs) and triethylantimony (TESb) as precursors. AlAs 0.16Sb 0.84 layers, which are lattice-matched to InAs substrates, are used as cladding layers for Sb-based IR-lasers. The use of a dilution line for TBAs reduces inhomogenities of the As content in the solid. X-ray diffraction results show that layers have good structural qualities. No gas phase prereactions are observed among the precursors. The precursor combination is suitable to reduce C and O incorporation in AlAsSb. We achieved undoped AlAs 0.16Sb 0.84 with low hole concentrations between 5×10 16 and 3×10 17 cm −3 and very high mobilities up to 500 cm 2/(V s) at 77 K and 300 cm 2/(V s) at room temperature. P- and n-type doping of 2×10 19 and 5×10 16 cm −3 are obtained by using diethylzinc (DEZn) and diethyltellurium (DETe), respectively.
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