A kinetic model for the growth of znte by metal organic chemical vapour deposition

Abstract

AbstractA kinetic model for the metal organic chemical vapour deposition (MOCVD) growth of ZnTe is presented, taking into account the competitive adsorption of organometallic precursors. By assuming that diethylzinc (DEZn) and diethyltellurium (DETe) or di‐isopropyltellurium (DIpTe) are adsorbed onto the surface by two sites, the model yields the growth rate as a function of the gas‐phase concentrations of the constitutents and is corroborated by experimental results obtained by the MOCVD growth (at 400°C with DETe or 350°C with DIpTe), which shows asymmetric behaviour: for a given DETe or DIpTe pressure (10−4 atm), the growth rate as a function of DEZn partial pressure passes through a maximum, whereas, at the same constant DEZn pressure, the growth rate increases monotonically when the DETe or DIpTe partial pressure increases