Abstract
AbstractA kinetic model for the metal organic chemical vapour deposition (MOCVD) growth of ZnTe is presented, taking into account the competitive adsorption of organometallic precursors. By assuming that diethylzinc (DEZn) and diethyltellurium (DETe) or di‐isopropyltellurium (DIpTe) are adsorbed onto the surface by two sites, the model yields the growth rate as a function of the gas‐phase concentrations of the constitutents and is corroborated by experimental results obtained by the MOCVD growth (at 400°C with DETe or 350°C with DIpTe), which shows asymmetric behaviour: for a given DETe or DIpTe pressure (10−4 atm), the growth rate as a function of DEZn partial pressure passes through a maximum, whereas, at the same constant DEZn pressure, the growth rate increases monotonically when the DETe or DIpTe partial pressure increases
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
