Abstract
The use of arsine in metal-organic vapor phase epitaxy (MOVPE) growth is well established in the compound semiconductor industry but associated with large potential risks due to its high toxicity. Worldwide efforts are therefore being made to replace it with less hazardous source materials. Acreo, a commercial supplier of quantum well infrared photodetector (QWIP) focal plane arrays (FPA), is working towards an MOVPE process where tertiarybutylarsine (tBAs) instead of arsine is used in the growth of AlGaAs/GaAs n-type QWIP epiwafers. In this paper we investigate the performance of QWIP FPA produced from conventional arsine and alternative tBAs arsenic precursors. We also discuss the two growth processes regarding uniformity, crystalline purity and production cost. The performance of our QWIP structures grown using tBAs and arsine is comparable in terms of response and response-to-the dark current ratio.
Published Version
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