QWIP focal plane arrays on InP substrates for single and dual band thermal imagers

Abstract

Alternative material systems on InP substrate provide certain advantages for mid-wavelength infrared (MWIR), long-wavelength infrared (LWIR) and dual band MWIR/LWIR quantum well infrared photodetector (QWIP) focal plane arrays (FPAs). While InP/InGaAs and InP/InGaAsP LWIR QWIPs provide much higher responsivity when compared to the AlGaAs/GaAs QWIPs, AlInAs/InGaAs system facilitates completely lattice matched single band MWIR and dual band MWIR/LWIR FPAs. We present an extensive review of the studies on InP based single and dual band QWIPs. While reviewing the characteristics of InP/InGaAs and InP/InGaAsP LWIR QWIPs at large format FPA level, we experimentally demonstrate that the cut-off wavelength of AlInAs/InGaAs QWIPs can be tuned in a sufficiently large range in the MWIR atmospheric window by only changing the quantum well (QW) width at the lattice matched composition. The cut-off wavelength can be shifted up to ∼5.0 μm with a QW width of 22 Å in which case very broad spectral response (Δ λ/ λ p = ∼30%) and a reasonably high peak detectivity are achievable leading to a noise equivalent temperature difference as low as 14 mK ( f/2) with 25 μm pitch in a 640 × 512 FPA. We also present the characteristics of InP based two-stack QWIPs with wavelengths properly tuned in the MWIR and LWIR bands for dual color detection. The results clearly demonstrate that InP based material systems display high potential for dual band MWIR/LWIR QWIP FPAs needed by third generation thermal imagers.